| PART |
Description |
Maker |
| MRA100014L MRA1000-14L |
VNF power transistor
UHF POWER TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| BLV194 |
UHF power transistor UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| BLW33 |
UHF Linear power transistor(UHF 线性功率晶体管)
UHF linear power transistor
|
Philips Semiconductors
NXP Semiconductors
|
| MS1582 |
UHF 860-960 MHz, Class A/AB, Common Emitter; fO (MHz): 0; P(out) (W): 25; Gain (dB): 9; Vcc (V): 25; ICQ (A): 3.2; IMD Type (dB): -45; Case Style: M173 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| MRF897D MRF897 |
2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
MRF897 900 MHz, 30 W, 24 V RF Power Transistor - Archived
|
FREESCALE SEMICONDUCTOR INC
Motorola
|
| PTB20189 |
UHF TV Linear Power Transistor Cellular Radio RF Power Transistor
|
ERICSSON[Ericsson]
|
| UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| BLT80 |
UHF power transistor
|
NXP Semiconductors
|
| BLV193 |
UHF power transistor
|
Philips Semiconductors
|
| BLV21 |
UHF power transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
